emf19 / UMF19N transistors 1/4 power management (dual transistors) emf19 / UMF19N 2sc4617 and dtc123ee are housed independently in a emt or umt package. ! ! ! ! external dimensions (units : mm) ! ! ! ! application power management circuit ! ! ! ! features 1) power switching circuit in a single package. 2) mounting cost and area can be cut in half. ! ! ! ! structure silicon epitaxial planar transistor ! ! ! ! equivalent circuits r 1 =2.2k ? r 2 =2.2k ? r 1 r 2 dtr2 tr1 (1) (2) (3) (4) (5) (6) rohm : emt6 emf19 rohm : umt6 eiaj : sc-88 UMF19N abbreviated symbol : f19 abbreviated symbol :f19 each lead has same dimensions each lead has same dimensions 0to0.1 ( 6 ) 2.0 1.3 0.9 0.15 0.7 0.1min. 2.1 0.65 0.2 1.25 ( 1 ) 0.65 ( 4 ) ( 3 ) ( 2 ) ( 5 ) 0.22 1.2 1.6 ( 1 ) ( 2 ) ( 5 ) ( 3 ) ( 6 ) ( 4 ) 0.13 0.5 0.5 0.5 1.0 1.6 ! ! ! ! packaging specifications type UMF19N umt6 f19 tr 3000 package marking code basic ordering unit(pieces) emf19 emt6 f19 t2r 8000
emf19 / UMF19N transistors 2/4 ! ! ! ! absolute maximum ratings (ta=25 c) tr1 parameter symbol limits unit v cbo 60 v 50 v v v ceo v ebo 7 i c ma 150 tj 150 ?c tstg ? 55 + 150 ?c p c 150 (total) mw ? collector-base voltage collector-emitter voltage emitter-base voltage collector current junction temperature storage temperature power dissipation ? 120mw per element must not be exceeded. dtr2 parameter ? 1 characteristics of built-in transistor. ? 2 120mw per element must not be exceeded. each terminal mounted on a recommended land. symbol v cc v in i c i o p c tj tstg limits 50 ? 10~ + 20 100 100 150(total) 150 ? 55~ + 150 ? 1 ? 2 unit v v ma ma mw c c supply voltage input voltage collector current output current power dissipation junction temperature range of storage temperature ! ! ! ! electrical characteristics (ta=25 c) tr1 parameter symbol bv cbo bv ceo bv ebo i cbo i ebo h fe v ce (sat) cob min. 60 50 7 ? ? 120 ? ? ? ? ? ? ? ? ? 2 ? ? ? 0.1 0.1 560 0.4 3.5 vi c = 50 a i c = 1ma i e = 50 a v cb = 60v v eb =7 v v ce = 6v, i c = 1ma i c /i b = 50ma/5ma v v a a ? v pf typ. max. unit conditions f t ? 180 ? v ce = 12v, i e = ? 2ma, f = 100mhz v cb = 12v, i e = 0a, f = 1mhz mhz collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector cutoff current emitter cutoff current dc current transfer ratio transition frequency collector-emitter saturation voltage output capacitance dtr2 parameter symbol min. typ. max. unit conditions ? transition frequency f t ? 250 ? ?? mhz v ce = 10v, i e =? 5ma, f = 100mhz ? characteristics of built-in transistor. v i(off) ?? 0.5 v v cc = 5v, i o = 100 a input voltage v i(on) 3.0 ?? v v o = 0.3v, i o = 20ma v o(on) ? 100 300 mv v o = 10ma, i i = 0.5ma output voltage i i ?? 3.8 ma v i = 5v input current i o(off) ?? 0.5 av cc = 50v, v i = 0v output current r 1 2.2 k ? ? input resistance g i 20 ?? ? v o = 5v, i o = 20ma dc current gain ? r 2 /r 1 0.8 1.0 1.2 ? resistance ratio
emf19 / UMF19N transistors 3/4 ! ! ! ! electrical characteristic curves tr1 0 0.1 0.2 0.5 2 20 50 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1 5 10 v ce = 6v collector current : i c ( ma) base to emitter voltage : v be (v) fig.1 grounded emitter propagation characteristics 25 ? c ? 55 ? c ta=100 ? c 0 20 40 60 80 100 0.4 0.8 1.2 1.6 2.0 0 collector current : i c (ma) collector to emitter voltage : v ce (v) 0.05ma 0.10ma 0.15ma 0.25ma 0.30ma 0.35ma 0.20ma ta=25 ? c i b =0a 0.40ma 0.50ma 0.45ma fig.2 grounded emitter output characteristics ( i ) 0 0 2 8 10 4 8 12 16 4 6 20 i b =0a ta=25 ? c collector current : i c (ma) collector to emitter voltage : v ce (v) 3 a 6 a 9 a 12 a 15 a 18 a 21 a 24 a 27 a 30 a fig.3 grounded emitter output characteristics ( ii ) 0.2 20 10 0.5 1 2 5 10 20 50 100 200 50 100 200 500 v ce =5v 3v 1v ta=25 ? c dc current gain : h fe collector current : i c (ma) fig.4 dc current gain vs. collector current ( i ) 0.2 0.5 1 2 5 10 20 50 100 200 20 10 50 100 200 500 25 ? c ? 55 ? c ta=100 ? c v ce = 5v dc current gain : h fe collector current : i c (ma) fig.5 dc current gain vs. collector current ( ii ) 0.2 0.5 1 2 5 10 20 50 100 200 0.01 0.02 0.05 0.1 0.2 0.5 i c /i b =50 20 10 ta=25 ? c collector saturation voltage : v ce (sat) ( v) collector current : i c (ma) fig.6 collector-emitter saturation voltage vs. collector current 0.2 collector saturation voltage : v ce (sat) (v) collector current : i c (ma) 0.01 0.02 0.05 0.1 0.2 0.5 0.5 1 2 5 10 20 50 100 200 i c /i b =50 20 10 ta=25 ? c fig.7 collector-emitter saturation voltage vs. collector current ( i ) 0.2 collector saturation voltage : v ce (sat) (v) collector current : i c (ma) 0.01 0.02 0.05 0.1 0.2 0.5 0.5 1 2 5 10 20 50 100 200 i c /i b =10 ta=100 ? c 25 ? c ? 55 ? c fig.8 collector-emitter saturation voltage vs. collector current ( ii ) collector saturation voltage : v ce (sat) (v) collector current : i c (ma) 0.2 0.01 0.02 0.05 0.1 0.2 0.5 0.5 1 2 5 10 20 50 100 i c /i b =50 ta=100 ? c 25 ? c ? 55 ? c fig.9 collector-emitter saturation voltage vs. collector current ( iii )
emf19 / UMF19N transistors 4/4 50 ? 0.5 ? 1 ? 2 ? 5 ? 10 ? 20 ? 50 ? 100 100 200 500 ta=25 ? c v ce =6v emitter current : i e (ma) transition frequency : f t (mhz) fig.10 gain bandwidth product vs. emitter current 0.2 0.5 1 2 5 10 20 50 1 2 5 10 20 cib cob collector to base voltage : v cb (v) emitter to base voltage : v eb (v) collector output capacitance : cob (pf) emitter input capacitance : cib (pf) fig.11 collector output capacitance vs. collector-base voltage emitter input capacitance vs. emitter-base voltage ta=25 ? c f = 1mhz i e =0a i c =0a ? 0.2 ? 0.5 ? 1 ? 2 ? 5 ? 10 10 20 50 100 200 emitter current : i e (ma) fig.12 base-collector time constant vs. emitter current base collector time constant : cc r bb' (ps) ta=25 ? c f=32mh z v cb =6v dtr2 100 200 500 1m 2m 5m 10m 20m 50m 100m 100 50 20 10 5 2 1 500m 200m 100m input voltage : v i(on) (v) output current : i o (a) fig.9 input voltage vs. output current (on characteristics) v o = 0.3v ta =? 40 c 25 c 100 c input voltage : v i(off) (v) output current : io (a) 0 3.0 10m 1 2m 5m 1m 200 500 100 20 50 10 2 5 0.5 1.0 1.5 2.0 2.5 v cc = 5v ta = 100 c 25 c ? 40 c fig.10 output current vs. input voltage (off characteristics) output current : i o (a) dc current gain : g i fig.11 dc current gain vs. output current v o = 5v 100 200 500 1m 2m 5m 10m 20m 50m 100m 1k 500 200 100 50 20 10 5 2 1 ta = 100 c 25 c ? 40 c 100 200 500 1m 2m 5m 10m 20m 50m 100m 1 500m 200m 100m 50m 20m 10m 5m 2m 1m l o /l i = 20 output current : i o (a) output voltage : v o (on) (v) ta = 100 c 25 c ? 40 c fig.12 output voltage vs. output current
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